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SI1900DL-T1-E3 / SOT-363-6 / Discrete Semiconductors

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SI1900DL-T1-E3 / SOT-363-6 / Discrete Semiconductors

Name: SI1900DLT1E3 SOT3636 Discrete Semiconductors
Brand: Vishay Semiconductors
Price: 1 USD

Brand Name : Vishay Semiconductors

Model Number : SI1900DL-T1-E3

Place of Origin : China

MOQ : 1

Price : Contact us

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : Contact us

Delivery Time : In stock

Packaging Details : Standard / New / Original

Product Category : MOSFET

Mounting Style : SMD/SMT

Number of Channels : 2 Channel

Vgs - Gate-Source Voltage : - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage : 1 V

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SI1900DL-T1-E3 / SOT-363-6 / Discrete Semiconductors

Description

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET® Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

Product Attribute	Attribute Value
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	630 mA
Rds On - Drain-Source Resistance:	480 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	1.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 mW
Channel Mode:	Enhancement
Tradename:	TrenchFET
Series:	SI1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Height:	1 mm
Length:	2.1 mm
Product Type:	MOSFET
Factory Pack Quantity:	3000
Subcategory:	MOSFETs
Width:	1.25 mm
Part # Aliases:	SI1900DL-E3
Unit Weight:	0.000265 oz

SI1900DL-T1-E3 / SOT-363-6 / Discrete Semiconductors

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