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BSZ097N10NS5ATMA1 N Channel Mosfet TSDSON-8 Power Discrete Semiconductor

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BSZ097N10NS5ATMA1 N Channel Mosfet TSDSON-8 Power Discrete Semiconductor

Brand Name : Infineon

Model Number : BSZ097N10NS5ATMA1

Place of Origin : Austria

MOQ : 1

Price : Contact us

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : Contact us

Delivery Time : In stock

Packaging Details : Standard / New / Original

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Packaging : Reel

Channel Mode : Enhancement

Pd - Power Dissipation : 69 W

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BSZ097N10NS5ATMA1 / TSDSON-8 / MOSFET


Ideal for high frequency switching

Optimized technology for DC/DC converters

Excellent gate charge x Rps(on) product (FOM)

N-channel,normallevel

100% avalanche tested

Pb-free plating;RoHS compliant

Qualified according to JEDEC1) for target applications

Halogen-free according to lEC61249-2-21

Product Attribute Attribute Value
Infineon
Product Category: MOSFET
Si
SMD/SMT
TSDSON-8
N-Channel
1 Channel
100 V
40 A
8.3 mOhms
- 20 V, + 20 V
2.2 V
28 nC
- 55 C
+ 150 C
69 W
Enhancement
OptiMOS
OptiMOS 5
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 5 ns
Forward Transconductance - Min: 23 S
Height: 1.1 mm
Length: 3.3 mm
Product Type: MOSFET
Rise Time: 5 ns
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 11 ns
Width: 3.3 mm
Part # Aliases: BSZ097N10NS5 SP001132550
Unit Weight: 0.001367 oz

BSZ097N10NS5ATMA1 N Channel Mosfet TSDSON-8 Power Discrete Semiconductor

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BSZ097N10NS5ATMA1 N Channel Mosfet

      

BSZ097N10NS5ATMA1 Power Discrete Semiconductor

      

N Channel Mosfet TSDSON-8

      
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